N 180V 160V 600MA 80/250MN SOT23 (SMD)
N 180V 160V 600MA 80/250MN SOT23 (SMD)
Specifications
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power – Max: 350 mW
- Frequency – Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Downloads
Additional Information
| Device |
Transistor |
| Type |
N | 180V | 160V | 600MA | 80/250MN | SOT23 | (SMD) |
Discover the MMBT5551 N-Channel MOSFET, designed for efficiency and reliability in your electronic projects. With a maximum voltage of 180V and a 600mA collector current, this SOT23 surface mount device ensures optimal performance in various applications. Its compact design and wide operating temperature range make it ideal for space-constrained environments. Upgrade your circuitry with the MMBT5551 for enhanced durability and power management.