P 60V 60V 10A 50/150 TO3 PNP Silicon Power Transistor
PNP Silicon Power Transistor
Specifications
- Polarity : PNP
- Collector-Base Voltage (Vcbo) : 60 V
- Collector-Emitter Voltage (Vceo) : 60 V
- Emitter-Base Voltage (Vebo) : ~5–7 V
- Collector Current (Ic max) : 10 A
- Power Dissipation (Ptot) : 150–200 W (with proper heatsink)
- Gain (hFE) : Typically 20–50
- Transition Frequency (ft) : 50–150 MHz
- Package : TO-3 metal can
- Operating Temperature : Up to ~150 °C
Additional Information
| Device |
Transistor |
| Type |
PNP | Silicon | Power |
The 2N3792 PNP Silicon Power Transistor delivers reliable performance with a 60V collector-emitter voltage and 10A current capability. Ideal for high-power applications, it ensures efficient operation up to 150°C, making it a perfect choice for your electronic projects. Upgrade your circuitry with this durable and high-gain transistor today!