P 160V 1.5A 25W 100MHZ TO220
SI-P 160V 1.5A 25W 100MHz
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 70 to 240
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Additional Information
| Frequency Response |
100MHz |
| Import Data |
SI-P 160V 1.5A 25W 100MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
25A |
Upgrade your electronics with the 2SA968 PNP BJT transistor, offering reliable performance at 160V and 1.5A. With a high frequency response of 100MHz and robust power dissipation of 25W, this silicon transistor ensures efficient operation for your projects. Perfect for enhancing circuit designs, it delivers quality and durability you can trust.