2SB641

SKU: 2SB641

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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P 30V 0.1A 120MHz

P 30V 0.1A 120MHz

Specifications

  • Type Designator: 2SB641
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.4 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 25 V
  • Maximum Emitter-Base Voltage |Veb|: 7 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 150(typ) MHz
  • Collector Capacitance (Cc): 3.5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 160
  • Noise Figure, dB: -
  • Package: SC71

Additional Information

Frequency Response 120MHz
Import Data SI-P 30V 0.1A 120MHz
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 0.4A
Discover the powerful 2SB641 PNP Bipolar Junction Transistor, designed for optimal performance with a frequency response of 120MHz. With a maximum collector current of 0.1A and excellent power dissipation, this silicon transistor ensures reliable operation for your electronic projects. Elevate your designs with this high-quality component that delivers efficiency and durability.

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