SI-P 50V 0.2A 0.5W
P 50V 45V 100MA 125MN TO92
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 110 to 220
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Additional Information
| Import Data |
SI-P 50V 0.2A 0.5W |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
0.5A |
Elevate your electronic projects with the BC557A PNP transistor, designed for optimal performance with a maximum collector-emitter voltage of 45V. This reliable bipolar junction transistor offers exceptional gain and low noise, making it perfect for amplifying signals in various applications. Enjoy enhanced durability with a wide operating temperature range, ensuring stability in any environment. Upgrade your circuitry today with the BC557A for efficient and effective results!