BC557B

SKU: BC557B

BRAND: Communica


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Delivery time: 2-5 working days for South Africa
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SI-P 50V 0.2A 0.5W

SI-P 50V 0.2A 0.5W

Specifications

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.5 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Additional Information

Import Data SI-P 50V 0.2A 0.5W
Keywords BJT
Device Transistor
Type Bipolar Junction
Polarity PNP
Material Silicon
Power Dissipation 0.5A
Discover the BC557B PNP Transistor, a high-performance silicon component designed for reliability and efficiency. With a max collector-emitter voltage of -45V and a DC current gain of 200 to 450, it ensures optimal power dissipation at 0.5W. Perfect for various applications, this versatile transistor offers exceptional noise performance and a wide temperature range, making it an ideal choice for your electronic projects. Upgrade your circuitry with the BC557B today!

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