SI-P 50V 0.2A 0.5W
SI-P 50V 0.2A 0.5W
Specifications
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.5 W
- DC Current Gain (hfe): 200 to 450
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Additional Information
| Import Data |
SI-P 50V 0.2A 0.5W |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
0.5A |
Discover the BC557B PNP Transistor, a high-performance silicon component designed for reliability and efficiency. With a max collector-emitter voltage of -45V and a DC current gain of 200 to 450, it ensures optimal power dissipation at 0.5W. Perfect for various applications, this versatile transistor offers exceptional noise performance and a wide temperature range, making it an ideal choice for your electronic projects. Upgrade your circuitry with the BC557B today!