P 100V 1A 0,8W 50MHZ
Transistor Silicon PNP
Specifications
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 1 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 1 A
- Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
- Transition Frequency (ft): 50 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Package: TO92
Additional Information
Discover the BC640 Transistor, a high-performance PNP silicon component designed for reliable operation in your electronic projects. With a maximum collector current of 1A and a transition frequency of 50MHz, this transistor ensures efficient signal amplification. Its compact TO92 package makes it easy to integrate into any circuit, delivering superior performance and durability. Upgrade your designs today with the BC640 for enhanced functionality and reliability.