P 45V 45V 3A 40MN TO126
P 45V 45V 3A 40MN TO126
Specifications
- Type Designator: BD132
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 11 W
- Maximum Collector-Base Voltage |Vcb|: 45 V
- Maximum Collector-Emitter Voltage |Vce|: 45 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 3 A
- Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 60 MHz
- Forward Current Transfer Ratio (hFE), MIN: 40
- Noise Figure, dB: -
- Package: TO126
Additional Information
| Frequency Response |
60MHz |
| Import Data |
SI-P 45V 3A 15W >60MHz |
| Keywords |
BJT |
| Device |
Transistor |
| Type |
Bipolar Junction |
| Polarity |
PNP |
| Material |
Silicon |
| Power Dissipation |
15A |
Discover the BD132 PNP transistor, engineered for excellence with a 45V collector-emitter voltage and 3A maximum current. Its robust design ensures reliable performance at high frequencies up to 60MHz, making it perfect for your electronic projects. Upgrade your circuits with this high-efficiency silicon BJT, delivering powerful results and durability.