Transistor Silicon PNP
Transistor Silicon PNP
Specifications
- Maximum Collector Power Dissipation (Pc): 0.15 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 0.025 A
- Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
- Transition Frequency (ft): 325 MHz
- Collector Capacitance (Cc): 0.7 pF
- Forward Current Transfer Ratio (hFE), MIN: 30
Additional Information
Discover the BF451 Silicon PNP Transistor, designed for high efficiency with a maximum collector power dissipation of 0.15W. With its robust voltage ratings and excellent frequency response, this reliable component ensures optimal performance for your electronic projects. Upgrade your circuit design today with the BF451 for improved reliability and efficiency.