High-Voltage NPN Silicon Power Transistor
High-Voltage NPN Silicon Power Transistor
Features
- High voltage switching capability
- Designed for line output / horizontal deflection stages
- Fast switching performance
- High reliability for inductive loads
Typical Applications
- CRT television horizontal output stage
- High-voltage switching circuits
- Power switching in industrial electronics
- Flyback transformer driver circuits
Pin Configuration (TO-3 Package)
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Case:Collector
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Pin 1:Base
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Pin 2:Emitter
- If you want, I can also provide:
- Equivalent / replacement transistors for BU109
- Full datasheet values (switching times, safe operating area, etc.)
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Comparison with BU208, BU508, BU508A(commonly used substitutes).
Specifications
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Transistor Type: NPN Silicon Power Transistor
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Package: TO-3 metal case
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Collector-Emitter Voltage (VCEO): 700 V (max)
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Collector-Base Voltage (VCBO): 1500 V (max)
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Emitter-Base Voltage (VEBO): 5 V (max)
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Collector Current (IC): 8 A (continuous)
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Peak Collector Current (ICM): 15 A
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Power Dissipation (Pc): 75 W
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DC Current Gain (hFE): 5 – 20
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Transition Frequency (fT): ~4 MHz
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Operating Junction Temperature: −65 °C to +150 °C
Additional Information
Discover the BU109 High-Voltage NPN Silicon Power Transistor, engineered for optimal performance in line output and horizontal deflection stages. With impressive voltage ratings and fast switching capabilities, this reliable transistor is perfect for CRT televisions and industrial power applications. Upgrade your electronic projects with the BU109 for enhanced efficiency and durability.