SI-N 1500V 8A 125W 0.4us
N 1500V 8A 125W 0,4US TO-3PN
Specifications
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Transistor Type: NPN Bipolar Power Transistor
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Package: TO-3P / TO-218 style power package
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Collector-Emitter Voltage (Vceo): 900 V
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Collector-Base Voltage (Vcbo): 1200 V
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Emitter-Base Voltage (Vebo): 5 V
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Continuous Collector Current (Ic): 8 A
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Peak Collector Current (Icm): 15 A
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Power Dissipation (Pc): ~90 W
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Transition Frequency (fT): ~3 MHz
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Operating Junction Temperature: −65 °C to +150 °C
Additional Information
The BU2508A NPN bipolar power transistor delivers robust performance with a collector-emitter voltage of 900V and a continuous current of 8A. Ideal for high-efficiency applications, it ensures reliability and durability under extreme conditions, making it the perfect choice for your power amplification needs. Upgrade your circuitry with this powerful component for optimal performance and longevity.