N 900V 400V 8A 60MX TOP3 Isolated
N 900V 400V 8A 60MX TOP3 Isolated
Specifications
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Transistor Type: NPN Silicon Power Transistor
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Collector‑Emitter Sustaining Voltage (V<sub>CEO(sus)</sub>): ≥ 400 V
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Collector‑Emitter Breakdown Voltage (V<sub>CEO</sub>): ~900 V
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Collector‑Base Voltage (V<sub>CBO</sub>): ~900 V
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Emitter‑Base Voltage (V<sub>EBO</sub>): ~10 V
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Continuous Collector Current (I<sub>C</sub>): ~6 A
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Peak / Pulse Collector Current: ~10 A
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Power Dissipation (P<sub>C</sub>): ~70 W (at 25 °C case temperature)
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Operating Junction Temperature: −65 °C to +150 °C
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Package: ISOWATT218 / TO‑3PML‑style high‑power package
Unlock superior performance with the BU426AF NPN Silicon Power Transistor, designed for high voltage applications up to 900V. With a robust continuous collector current of 6A and efficient power dissipation, this transistor ensures reliability and longevity in your electronic projects. Elevate your circuit designs with the BU426AF's exceptional thermal stability and versatility.