IRF610

SKU: IRF610

BRAND: Communica

In Stock
R 9.06_{(inc VAT)}
R 7.88_{(ex VAT)}

Collections: Semiconductors

Type: Transistors

Category: N Channel Mosfet Transistor

SIP MOS N-Channel 200V 3,3A 1,5R TO220

SIP MOS N 200V 3,3A 1,5R TO220

Specifications

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 36 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.2(max) nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 53 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Downloads

Datasheet - IRF610

Additional Information

CatGroup

Field Effect Transistor

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