SIP MOS N-Channel 200V 3,3A 1,5R TO220
SIP MOS N 200V 3,3A 1,5R TO220
Specifications
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 36 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 3.3 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 8.2(max) nC
- Rise Time (tr): 17 nS
- Drain-Source Capacitance (Cd): 53 pF
- Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Downloads
Additional Information
| CatGroup |
Field Effect Transistor |
Unlock high-performance efficiency with the IRF610 N-Channel MOSFET. With a robust 200V, 3.3A capacity and low on-state resistance of 1.5 ohms, this transistor ensures reliable power management for your electronic projects. Ideal for demanding applications, it delivers superior heat dissipation and quick response times, making it a must-have for engineers and hobbyists alike. Upgrade your circuitry today!