IRFB4410

SKU: IRFB4410

BRAND: IOR


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Delivery time: 2-5 working days for South Africa
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N-MOSFET 100V 97A 230W TO220 Rds = 7,2 - 9 mOhm

N-MOSFET 100V 97A 230W TO220

Features

Channel Type N
Maximum Continuous Drain Current 88 A
Maximum Drain Source Voltage 100 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 10 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 200 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +175 °C
Length 10.66mm
Width 4.82mm
Transistor Material Si
Typical Gate Charge @ Vgs 120 nC @ 10 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 9.02mm
Series HEXFET

Downloads

Additional Information

Device Transistor
The IRFB4410 N-MOSFET delivers exceptional performance with a maximum continuous drain current of 97A and low Rds(on) of just 7.2 mΩ. Ideal for high-efficiency applications, this TO-220 transistor ensures optimal power dissipation up to 230W, making it perfect for demanding electronic projects. Upgrade your circuitry with the reliable IRFB4410 for superior efficiency and thermal performance.