IGBT 650V 120A 469W TO247
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package
Downloads
Additional Information
Upgrade your power electronics with the STGW80H65DFB IGBT transistor. With a maximum junction temperature of 175°C and a low saturation voltage of just 1.6V, this high-speed switching device ensures efficient performance and reliability. Experience safe paralleling and minimized tail current, making it the ideal choice for demanding applications. Boost your designs with this robust, lead-free solution today!