STGW80H65DFB

SKU: STGW80H65DFB

BRAND: ST


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Delivery time: 2-5 working days for South Africa
In stock - Ready for immediate dispatch
Free shipping for orders over R1,000.00
IGBT 650V 120A 469W TO247

Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
  • Lead free package

Downloads

Additional Information

Device Transistor
Upgrade your power electronics with the STGW80H65DFB IGBT transistor. With a maximum junction temperature of 175°C and a low saturation voltage of just 1.6V, this high-speed switching device ensures efficient performance and reliability. Experience safe paralleling and minimized tail current, making it the ideal choice for demanding applications. Boost your designs with this robust, lead-free solution today!