FET N-Channel 800V 9A 160W 900MR TO220
FET N-Channel 800V 9A 160W
Specifications
- Channel Type: N Channel
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 9A
- Drain Source Voltage Vds: 800V
- Drain Source On State Resistance: 0.78ohm
- On Resistance Rds(on): 0.78ohm
- Rds(on) Test Voltage: 10V
- Transistor Mounting: Through Hole
- Gate Source Threshold Voltage Max: 3.75V
- Power Dissipation Pd: 160W
- Transistor Case Style: TO-220
- Power Dissipation: 160W
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
Downloads
Additional Information
The STP10NK80Z N-Channel MOSFET delivers exceptional performance with 800V, 9A, and 160W capabilities, making it ideal for high-voltage applications. Its low on-resistance of 0.78 ohms ensures efficient power management, while the TO-220 package allows for easy installation. Upgrade your projects with this reliable transistor that excels in thermal performance and versatility.